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Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes

机译：双极传导对1.2和3.5kV 4H-siC JBs二极管的电特性和可靠性的影响

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Pierre Brosselard; Nicolas Camara; Viorel Banu; Xavier Jordà; Miquel Vellvehi; José Millán;
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1. Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes [J] . Brosselard P., Camara N., Banu V., IEEE Transactions on Electron Devices . 2008,第8期

机译：双极导电对1.2kV和3.5kV 4H-SiC JBS二极管的电气特性和可靠性的影响
2. Impact of design on electrical characteristics of 3.5 kV 4H-SiC JBS diode [J] . Pierre Brosselard, Florian Chevalier, Benjamin Proux, Materials science forum . 2015,第期

机译：设计对3.5 kV 4H-SiC JBS二极管电气特性的影响
3. Effect of the Field Oxidation Process on the Electrical Characteristics of 6500V 4H-SiC JBS Diodes [J] . Ling Sang, Jinghua Xia, Liang Tian, Materials science forum . 2020,第1期

机译：现场氧化过程对6500V 4H-SiC JBS二极管电特性的影响
4. Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on Substrate with Low Threading Dislocation Density [C] . H. Fujiwara, M. Konishi, T. Ohnishi, Silicon carbide and related materials 2010 . 2011

机译：低穿线位错密度衬底上制备的4H-SiC JBS二极管的反向电特性
5. Impact of uniaxial strain on the electrical characteristics of MOSFETs and Esaki tunnel diodes. [D] . Zhao, Wei. 2006

机译：单轴应变对MOSFET和Esaki隧道二极管的电气特性的影响。
6. Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes [O] . Young-Jae Lee, Michael A. Schweitz, Jong-Min Oh, 2020

机译：退火气氛对Ga2O3 / 4H-SiC n-n异质结二极管特性的影响
7. Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes [O] . Brosselard, Pierre, Camara, Nicolas, Banu, Viorel, 2008

机译：双极导电对1.2kV和3.5kV 4H-SiC JBS二极管的电气特性和可靠性的影响
8. Bipolar Transistor and Diode Failure to Electrical Transients--Predictive Failure Modeling versus Experimental Damage Testing. 2. AFWL Transistor and Diode Failure Model [R] . Vrabel, M. J. 1981

机译：双极晶体管和二极管电瞬态失效 - 预测失效模型与实验损伤测试。 2. aFWL晶体管和二极管失效模型

Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes

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